High voltage generation and regulation system for digital multilevel nonvolatile memory

ABSTRACT

A high voltage generator provides high voltage signals with different regulated voltage levels. A charge pump generates the high voltage, and includes a quadrature phase forward and backward Vt-canceling high-voltage self-biasing charge pump with a powerup-assist diode. A high voltage series regulator generates the high voltage supply levels, and includes slew rate enhancement and trimmable diode regulation. A nested loop regulator eliminates shunt regulation.

BACKGROUND OF THE INVENTION

The invention relates to a high voltage signal generator and regulator,and more particularly to a high voltage signal generator and regulatorfor a memory, such as a digital multilevel nonvolatile memory.

A conventional mixed mode integrated circuit system frequently usesdifferent voltage supplies. Analog signal processing, such asamplification, comparison, pulse generation, may be performed at highvoltage. A FLASH memory applies an erase signal and a program signal tomemory cells. The erase signal and the program signal have voltagelevels greater than a supply voltage. Also in multilevel volatilememories, the variation of the voltage level of the program signal fallsin a smaller range for the multibit signals stored in the memory cells.

SUMMARY OF THE INVENTION

The present invention provides a high voltage generation and regulationsystem that generates at least one voltage signal having a voltage levelgreater than the supply voltage. The system may comprise a charge pump,a loop regulator, and a nested loop regulator. The charge pump maycomprise at least one pump and an oscillator.

In one aspect, the oscillator provides clock signals to the at least onepump. The output of the oscillator may be disabled without turning offthe clock generation. The oscillator may be a ring oscillator. In oneaspect, the ring oscillator and the output stage may comprise inverterswith a capacitor coupled to the output of the inverter. In one aspect,the ratio of the capacitors in the ring oscillator to the capacitor inthe output stage determine the phase shift between the two clocksignals. In another aspect, the capacitance of the capacitors areidentical and a bias applied the ring oscillator and the output stageare ratioed to adjust the phase between the two clock signals.

In one aspect, the pump may include a plurality of voltage boost stagescoupled in series. Each voltage boost stage generates an output signalhaving a voltage level higher than an input voltage applied thereto andcomprises a first transistor coupled between the input of voltage and anoutput voltage, and a power-up assist diode to charge the input voltageapplied to the voltage boost stage coupled to the output signal. Thepower-up assist diode also operates for forward VT (threshold voltage)canceling. The voltage boost stage may include a backward VTcancellation transistor coupled to the first transistor to substantiallycancel threshold voltage of the first transistor in response to theoutput signal. The voltage boost stage may include a high voltageself-biasing circuit to precharge the output signal of the voltage booststage.

The regulator may comprise a voltage regulator providing a regulatedvoltage signal in response to an input voltage signal and a controlsignal, a comparator coupled to the voltage regulator to generate thecontrol signal in response to the regulated voltage signal, and a slewrate enhancement circuit coupled to an output of the comparator to boostthe control signal in the event a regulated voltage signal has a voltagelevel less than a threshold voltage. The slew rate enhancement circuitmay include a source follower, and may include a voltage divider thatprovides a divided signal to the comparator in response to the regulatedvoltage signal.

The nested loop regulators monitors the regulated voltage signal anddisables the oscillator outputs when the voltage of the regulatedvoltage signal is substantially identical to a predetermined value.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a high voltage generation andregulation system in accordance with the present invention.

FIG. 1 a is a block diagram illustrating a charge pump of the highvoltage generation and regulation system of FIG. 1.

FIG. 2 is a schematic diagram of an oscillator of the charge pump ofFIG. 1 a.

FIG. 3 is a schematic diagram of a phase driver of the charge pump ofFIG. 1 a.

FIG. 4 is a schematic diagram illustrating a phase buffer of the phasedriver of FIG. 3.

FIG. 5 is a schematic diagram illustrating a pump of the charge pump ofFIG. 1 a.

FIG. 6 is a schematic diagram illustrating an initial voltage booststage circuit of the pump of FIG. 5.

FIG. 7 is a schematic diagram illustrating an intermediate voltage booststage circuit of the pump of FIG. 5.

FIG. 8 is a schematic diagram illustrating a final voltage boost stagecircuit of the pump of FIG. 5.

FIG. 9 is a schematic diagram illustrating a pump regulator of the highvoltage generation and regulation system of FIG. 1.

FIG. 10 is a schematic diagram illustrating a high medium supply(VHMSUP) voltage regulator of the pump regulator of FIG. 9.

FIG. 11 is a schematic diagram illustrating an output boost circuit ofthe high medium supply (VHMSUP) voltage regulator of FIG. 10.

FIG. 12 is a schematic diagram illustrating a feedback voltage dividerof the voltage regulator of FIG. 10.

FIG. 13 is a schematic diagram illustrating a voltage dividermultiplexer of the feedback voltage divider of FIG. 12.

FIG. 14 is a schematic diagram illustrating a loop regulator of the highvoltage generator and regulation system of FIG. 1.

FIG. 15 is a schematic diagram illustrating a medium voltage pumpgenerator of the charge pump of FIG. 1 a.

FIG. 16 is a schematic diagram illustrating a medium voltage pumpvoltage divider of the medium voltage pump generator of FIG. 15.

DETAILED DESCRIPTION

FIG. 1 is a block diagram illustrating a high voltage generation andregulation system 10 in accordance with the present invention. The highvoltage generation and regulation system 10 generates a plurality ofregulated power signals having different voltage levels and at voltagelevels greater than a supply voltage applied to the system 10. The highvoltage generation and regulation system 10 uses slew rate enhancementfor decreased power up time. The high voltage generation and regulationsystem 10 includes nested loop regulation to achieve optimal powerefficiency and high precision.

In one embodiment, the high voltage generation and regulation system 10provides the plurality of regulated power signals to a memory device(not shown). In another embodiment, the memory device is a digitalmultilevel nonvolatile memory.

The high voltage generation and regulation system 10 comprises a chargepump 12, a pump regulator 14, and a loop regulator 16.

The charge pump 12 generates a high voltage pump (VHPUMP) signal 20 andan oscillator test (POSC) signal 22. The high voltage pump (VHPUMP)signal 20 is enabled in response to an enable signal (ENB) 28 from theloop regulator 16. (The ENB is enable bar, which is indicative of anactive low signal). The oscillator test signal 22 provides a test signalto analyze the output of an oscillator 102 (see FIG. 1 a) in the chargepump 12 or may be used as an input port to force an oscillator signalinto the charge pump 12. A power down (PDB) signal 26 turns off thecharge pump 12. A first reference (IREFN1) signal 24 from a band gapvoltage circuit (not shown) provides a reference current to the chargepump 12 to adjust the bias of the oscillator 102 (see FIG. 1 a). Bandgap voltage circuits used in charge pump circuits and memory devices arewell known in the art. A medium voltage pump (VMPUMP) signal 30 from thepump regulator 14 provides a self bias high voltage level for the chargepump 12.

The pump regulator 14 generates a plurality of regulated power signalshaving different voltage levels. Specifically, the pump regulator 14generates a high voltage supply (VHSUP) signal 40, a medium high voltagesupply (VHMSUP) signal 42, the medium voltage pump (VMPUMP) signal 30and a medium voltage supply (VMSUP) signal 44 in response to the highvoltage pump (VHPUMP) signal 20 from the charge pump 12. A referencevoltage (VREF) signal 32 sets a reference for regulating the highvoltage (VHSUP) signal 40 and the medium high voltage pump (VHMSUP)signal 42. A second reference (IREFN2) signal 46 controls the biasing ofthe pump regulator 14. A voltage divider disable (DISVIDB) signal 48forms an enable/disable signal for the pump regulator 14. A plurality ofvoltage selection signals are applied to the pump regulator 14 forsetting a divided voltage as a reference voltage for the pump regulator14. Specifically, a first voltage selection (FVHMSUP0) signal 50, asecond voltage selection (FVHMSUP1) signal 52, a third voltage selection(FVHMSUP2) signal 54, and a fourth voltage selection (FVHMSUP3) signal56 set a multiplexer 1204 (see FIG. 12) to change the voltages of avoltage divider 1006 (see FIG. 10) to adjust the reference voltageapplied to an operational amplifier 1008 (see FIG. 10). The power down(PD) signal 38 disables the pump regulator 14 during power down.

The loop regulator 16 provides nested loop regulation to control thecharge pump 12. The loop regulator 16 generates the enable (ENB) signal28 to disable the charge pump 12 in response to the high voltage pump(VHPUMP) signal 20 being above a certain threshold and the enable (EN)signal 36. The reference voltage (VREF) signal 32 sets a trigger voltagefor comparing to the high voltage pump (VHPUMP) signal 20 in the loopregulator 16 to set the enable (ENB) signal 28. A third reference(IREFN3) signal 34 from a band gap voltage circuit (not shown) controlsthe biasing of an operational amplifier 1404 (see FIG. 14) of the loopregulator 16. The power down (PD) signal 38 disables the loop regulator16 during power down.

FIG. 1 a is a block diagram illustrating the charge pump 12, whichcomprises an oscillator 102, a plurality of phase drivers 104-1 and104-2, a plurality of pumps 106-1, 106-2, 106-3, and 106-4, and a mediumvoltage pump generator (VMPUMPGEN) 108. The charge pump 12 is aquadrature phase, forward and backward threshold voltage (VT) canceling,high voltage self-biasing charge pump.

The oscillator 102 provides oscillator clock signals 110-1 and 110-2having different phases to the phase drivers 104-1, 104-2, respectively.In response, each of the phase drivers 104-1, 104-2 generates two phaseclocks 112 and 114 and two non-overlapping clocks 116 and 118 to formfour clock phases. The phase clocks are applied to the four pumps 106-1through 106-4. Likewise, the non-overlapping clocks are applied to thepumps 106-1 through 106-4 to provide the VT-canceling function. Each ofthe four pumps 106-1 through 106-4 boosts the voltage at the rise of theclock signal, thereby producing a more continuous, lower ripple outputvoltage of the high voltage pump (VHPUMP) signal 20. The pumps 106comprise multiple stages (see FIG. 5) for boosting the voltage. Eachstage (see FIGS. 6, 7, 8) of the pump 106 includes a precharging, highvoltage self-biased diode to preset the initial charge on a capacitor inthe stage. In one embodiment, the self-biasing refers to the pumps 106generating its own bias voltage. Each stage also includes a powerup-assist diode to enable a more efficient, high speed power up withoutdrawing additional power. The power up-assist diode also providesforward VT cancellation.

The first reference (IREFN1) signal 24 adjusts the bias for theoperation of the oscillator 102. The power down (PDB) signal 26 turnsoff the oscillator 102 during power down. The enable (ENB) signal 28disables the outputs of the oscillator 102.

The phase driver 104-1 provides a first phase drive clock signal 112-1and a second phase drive clock signal 114-1 to respective inputterminals 122 and 124 of the pump 106-1 and to the respective inputterminals 124 and 122 of the pump 106-2. The first phase drive clocksignal 112-1 is 180° from the second phase drive clock signal 114-1. Thephase driver 104-1 also provides a first phase drive non-overlap clocksignal 116-1 and a second phase drive non-overlap clock signal 118-1 torespective input terminals 126 and 128 of the pump 106-1 and to therespective input terminals 128 and 126 of the pump 106-2.

The phase driver 104-2 provides a first phase drive clock signal 112-2and a second phase drive clock signal 114-2 to respective inputterminals 122 and 124 of the pump 106-3 and to respective inputterminals 124 and 122 of the pump 106-4. The first phase drive clocksignal 112-2 is 180° out of phase from the second phase drive clocksignal 114-2. The phase driver 104-2 also provides a first phase drivenon-overlap clock signal 116-2 and a second phase driver non-overlapclock signal 118-2 to respective input terminals 126 and 128 of the pump106-3 and to respective input terminals 128 and 126 of the pump 106-4.In response to the applied clock signals, the pumps 106-1, 106-2, 106-3,and 106-4 generate the high voltage pump (VHPUMP) signal 20 using themedium voltage pump (VMPUMP) signal 30 from the medium voltage pumpgenerator (VMPUMPGEN) 108 for high voltage self bias.

The medium voltage pump generator (VMPUMPGEN) 108 generates the mediumvoltage pump (VMPUMP) signal 30 in response to the high voltage pump(VHPUMP) signal 20. A power down (PD) signal 38 disables the mediumvoltage pump generator (VMPUMPGEN) 108. A fourth reference (IREFN)signal 120 from a band gap circuit (not shown) controls the biasing ofthe medium voltage pump generator 108 to adjust the voltage of themedium voltage pump signal 30.

FIG. 2 is a schematic diagram of the oscillator 102. The oscillator 102comprises a ring oscillator 202, an output inverter stage 204, an outputstage capacitor 206, a multiplexer 208, a voltage control circuit 210,and a bias control circuit 212. The ring oscillator 202 comprises aplurality of oscillator inverter stages 214-1 through 214-5 and aplurality of oscillator capacitors 216-1 through 216-5. As an overview,the oscillator 102 receives an enable (ENB) signal 28 and a power down(PDB) signal 26 and provides the oscillator clock signals 110-1 and110-2 that are 90° out of phase of each other. By controlling thecurrent on each oscillator inverter stage 214 and the output inverterstage 204 to charge and discharge the capacitors 216 and 206, theoscillator 102 provides precise timing control of the oscillator clocksignals 110.

The oscillator inverter stages 214-1 through 214-5 are connectedserially as inverters with the corresponding oscillator capacitor 216-1through 216-5, respectively, coupled between the output of theoscillator inverter stage 214-1 through 214-5 and ground. The outputstage capacitor 206 is coupled between the output of the output inverterstage 209 and ground.

The output inverter stage 204 and the oscillator inverter stages 214-1through 214-5 each comprise a pair of PMOS transistors 220, 221 and apair of NMOS transistors 222, 223. (For clarity and simplicity of thedrawings, the reference numbers for the PMOS transistor 220 and 221 andthe NMOS transistors 222 and 223 are shown only for the inverter stage214-1.) The PMOS transistors 220, 221 includes drain-source terminalscoupled between a power supply voltage Vdd and an output terminal 224.The NMOS transistors 223 and 223 include drain-source terminals coupledbetween the output terminal 224 and ground. The gate of the PMOStransistor 220 is connected to an output of the voltage control circuit210. The gates of the PMOS transistor 221 and the NMOS transistor 222are coupled together to form an inverter. The gate of the NMOStransistor 223 is coupled to the first reference (IREF) signal 24 whichprovides a current bias and also is coupled to the bias control circuit212.

The bias control circuit 212 includes a plurality of diode connectedNMOS transistors 230 that are coupled together in parallel between thefirst reference (IREF) signal 24 and ground. The number of diodeconnected NMOS transistors 230 are selectable.

The power down (PDB) signal 26 enables the voltage control circuit 210to provide an enable signal to the output inverter stage 204 and theplurality of oscillator inverter stages 214-1 through 214-5. The voltagecontrol circuit 210 comprises an inverter 225, PMOS transistors 226,227, and NMOS transistors 228, 229. Both the PMOS transistors 226, 227include drain-source terminals coupled between the power supply Vdd andthe output terminal of the voltage control circuit 210. The PMOStransistor 226 includes a gate enabled by the power down (PDB) signal26. The PMOS transistor 227 is diode connected with a gate and draincoupled together. The inverter 225 inverts the power down (PDB) signal26 and applies it to the gate of the NMOS transistor 228, which includesdrain-source terminals coupled between the common node formed of thegate of the NMOS transistor 229 and the first reference (IREF) signal24, and ground. During power down, the NMOS transistor 228 is turned onto ground the gate and the first reference (IREF) signal 24, and theNMOS transistor 229 is turned off.

The multiplexer 208 is coupled between the output of the ring oscillator202 and the input of the ring oscillator 202. The output of the outputinverter stage 204 which is filtered by the output stage capacitor 206to ground is applied to another input to the multiplexer 208. Themultiplexer 208 provides the oscillator clock signals 110-1 and 110-2.The multiplexer 208 comprises NOR gates 232, 234, 236, and inverters 238through 242. The enable (ENB) signal 28 disables the output of themultiplexer 208 and disables the running of the ring oscillator 202. Inanother embodiment, the enable (ENB) signal 28 does not disable the ringoscillator 202.

The output inverter stage 204 and the output stage capacitor 206 provideprecise generation of the phase shift of the oscillator clock signals110-1 and 110-2. In one embodiment, the current control into the outputinverter stage 204 is substantially identical as to the current controlof the oscillator inverter stages 214-1 through 214-5. The degree ofphase shift may be controlled by the ratio of the capacitance of theoutput stage capacitor 206 and the oscillators 216-1 through 216-5. Inanother embodiment, the capacitance of the output stage capacitor 206may be the same as the capacitance of the oscillator capacitors 216-1through 216-5 and the degree of phase shift may be controlled by theratio of the bias current applied to the oscillator inverter stages214-1 through 214-5 to the bias current of the output inverter stage204.

FIG. 3 is a schematic diagram of the phase driver 104 of the charge pump12. As an overview, the phase driver 104 receives clock signals from theoscillator 102 and generates two clock signals 180° from each other, andtwo non-overlapping clocks for each of the first two clocks. These clocksignals drive voltage boost stages in the pump 106, described below inconjunction with FIG. 5. The non-overlapping clocks 116 and 118 enablethe Vt-cancellation in the voltage boost stages.

The phase driver 104 comprises phase buffers 302-1 and 302-2, aplurality of inverters 304 through 334, a plurality of NOR gates 336 and337, a transfer gate 340, and a plurality of delay circuits 342 through347. The delay circuits are of the same circuit topology for delaytracking. For example, the delay circuits are biased on R-C. Theoscillator clock signal 110 is applied to the inverter 304 and thetransfer gate 340. A first signal path is through the inverters 304through 310, the NOR gate 336, and the delay circuit 343 to the phasebuffer 302-1. A second signal path branches from the inverter 308 of thefirst signal path (alternatively through the delay circuit 342 and theinverters 311) through inverters 312-314 to generate the second phasedrive non-overlap clock signal 118. A third signal path branches fromthe inverter 306 of the first signal path through the delay circuit 344and the inverters 317 through 319 to the phase buffer 302-2.

A fourth signal path is through the transfer gate 340, the inverters 320through 325, the NOR gate 337 and the delay circuit 346 to the phasebuffer 302-2, which generates the second phase drive clock signal 114. Afirst feedback path from the inverter 322 is delayed by the inverters315 and 316 and applied to the NOR gate 336 of the first signal path. Asecond feedback path from the inverter 307 of the first signal path isdelayed by the inverters 326 and 327 and applied to the NOR gate 337 ofthe fourth signal path. A fifth signal path branches from the inverter323 of the fourth signal path (alternatively through the delay circuit347 and the inverters 331) through inverters 332-334 to generate thefirst phase drive non-overlap clock signal 116. A sixth signal pathbranches from the inverter 321 of the fourth signal through the delaycircuit 345 and the inverters 328 through 330 to the phase buffer 302-1.

FIG. 4 is a schematic diagram illustrating the phase buffer 302 of thephase driver 104 of FIG. 3. The phase buffer 302 comprises a pluralityof driving stage circuits 402-1 through 402-6 coupled between a phase Bsignal line 404 and a phase signal line 406. The output of each drivingstage circuit 402-1 through 402-6 is coupled to an output signal line408. For the phase buffer 302-1, the phase B signal line 404 receivesthe output of the inverter 330, and the phase signal line 406 receivesthe output of the inverter 310. The output signal line 408 provides thefirst phase drive clock signal 112. For the phase buffer 302-2, thephase B signal line 404 receives the output of the inverter 310, and thephase signal line 406 receives the output of the inverter 325. Theoutput signal line 408 provides the second phase drive clock signal 114.

The phase B signal line 404 comprises a plurality of resistors 410-1through 410-5 connected in series. The phase signal line 406 comprises aplurality of resistors 411-1 through 411-5 connected in series. Thedriving stage circuits 402-1 through 402-5 are coupled to the phase Bsignal line 404 in front of the respective resistor 410-1 through 410-5,and coupled to the phase signal line 406 in front of the respectiveresistor 411-1 through 411-5. The resistors 410-1 through 410-5 and theresistors 411-1 through 411-5 reduce the peak current of the phasebuffer 302 in response to the phase B signal line 404 and the phasesignal line 406, respectively.

Each driving stage circuit 402-1 through 402-6 comprises PMOStransistors 412, 414 and NMOS transistors 416, 418. The PMOS transistors412 and 414 each include drain-source terminals coupled between a powerline and the output signal line 408, and include a gate terminal coupledto the phase B signal line 404. The NMOS transistors 416 and 418 eachinclude drain-source terminals coupled between the output signal line408 and ground, and includes a gate terminal coupled to the phase signalline 406.

FIG. 5 is a schematic diagram illustrating a pump 106 of the charge pump12. As an overview, the pump 106-1 through 106-4 is a Vt-cancellationpump with a powerup-assist diode and high voltage self-biasing. The pump106 comprises a plurality of initial voltage boost stage circuit 502-1,502-2, a plurality of intermediate voltage boost stage circuits 504-1,504-2, and 504-3, a plurality of final voltage boost stage circuits506-1 through 506-5, an input voltage boost stage 508, and a feedbackcircuit 510. For simplicity and clarify of the drawings, a power supplyterminal 521 and input terminals 524, 526, 528 are labeled only for thefinal voltage boost stage 506-1, but the initial voltage boost stagecircuits 502, the intermediate voltage boost stage circuits 504, and thefinal voltage boost stage circuits 506 each include terminals 522, 524,526, 528. The non-overlapping clocks 116 and 118 enable theVT-cancellation in the voltage boost stages 504, 506 and 508.

The input voltage boost stage 508 selectively couples the supply voltageVDD on the power supply terminal 521 to the first initial voltage booststage circuit 501-1. The output of the input voltage boost stage 508 iscoupled to the input of the initial voltage boost stage circuit 502-1.The initial voltage boost stage circuit 502-1 and 502-2 are coupled inseries, and in turn coupled to the intermediate voltage boost stagecircuits 504-1, 504-2, 504-3, which are coupled in series. The finalvoltage boost stage circuit 506-1 through 506-5 are coupled in seriesand coupled to the intermediate voltage boost stage circuit 504-3.

The medium voltage pump (VMPUMP) signal 30 is applied to the inputterminal 522 of each of the plurality of initial voltage boost stagecircuits 502-1, 502-2, each of the plurality of intermediate voltageboost stage circuit 504-1, 504-2, and 504-3, and each of the pluralityof final voltage boost stage circuits 506-1 through 506-5. The inputterminal 122 and the input terminal 126 are coupled to an input terminal528 and an input terminal 524, respectively, of the initial voltageboost stage 502-1, the intermediate voltage boost stage circuits 504-1,504-3 and the final voltage boost stage circuits 506-2 and 506-4 toprovide the respective first phase drive clock signal 112 and the firstphase drive non-overlap clock signal 116. The input terminal 124 and theinput terminal 128 are coupled to the respective input terminal 528 andthe input terminal 524 of the initial voltage boost stage 502-2, theintermediate voltage boost stage circuit 504-2 and the final voltageboost stage circuits 506-1 and 506-3 to provide the respective secondphase drive clock signal 114 and the second phase drive non-clock signal118.

The input voltage boost stage 508 comprises a capacitor 512, a transferNMOS transistor 514, a backward VT-canceling transistor 516, and apowerup assist and forward VT-canceling diode 518. The drain-sourceterminals of the transfer NMOS transistor 514 couple the power signalVdd terminal 521 to the input of the initial voltage boost stagecircuits 502-1. The power-up assist and forward VT-canceling diode 518is coupled between the drain and the gate of the transfer NMOStransistor 514. In one embodiment, the diode 518 is a diode connectedNMOS transistor. The drain-source terminals of the VT cancelingtransistor 516 couple the power supply Vdd to the gate of the transferNMOS transistor 514. The forward VT-canceling of transistor 516 and/orbackward VT-canceling action of diode 516 effectively cancel the effectsof the threshold voltage of the transfer NMOS transistor 514.

The drain-source terminals of the NMOS transistor 514 couple the Vddvoltage terminal 521 signal to the input of the initial voltage booststage 502-1. The drain-source terminals of the NMOS transistor 516couple the Vdd voltage terminal 521 signal to the gate of the NMOStransistor 514. The gate of the NMOS transistor 516 is coupled to thesource of the NMOS transistor 516. The drain-source terminals of theNMOS transistor 518 couple the Vdd voltage terminal 521 to the gate ofthe NMOS transistor 514. The gate of the NMOS transistor 518 is coupledto the Vdd voltage terminal 521. The capacitor 512 couples the secondphase drive clock signal 118-1 to the gate of the NMOS transistor 514.

The feedback circuit 510 limits the voltage level of the high voltagepump signal 20 across the last stage 506 by feeding back the highvoltage pump signal 20 into the input of the final voltage boost stagecircuit 506-5. The feedback circuit 510 comprises NMOS transistors 520-1through 520-5. The drain-source terminals of the NMOS transistors 520-1through 520-5 are connected in series and connected between the highvoltage pump (VHPUMP) signal 20, which is provided by an output terminalof the final voltage boost stage circuit 506-5, and the input terminal526 of the final voltage boost stage circuit 506-5.

FIG. 6 is a schematic diagram illustrating the initial voltage booststage circuit 502 of the pump 106 of FIG. 5.

The initial voltage boost stage circuit 502 comprises NMOS transistors602, 604, 606, 608, 610 and capacitors 612, 614. The drain-sourceterminals of the NMOS transistor 602 are coupled between the inputterminal 526 and an output terminal 617 of the initial voltage booststage circuit 502. The capacitor 614 is coupled between the inputterminal 526 and the oscillator signal on the input terminal 528 (asshown in FIG. 5, the oscillator signal may be either the first phasedrive non-overlap clock signal 116 or the second phase drive non-overlapclock signal 118). The NMOS transistor 604 includes drain-sourceterminals that are coupled between the drain and gate terminals of theNMOS transistor 602, and includes a gate coupled to the source of theNMOS transistor 602. The NMOS transistor 604 cancels the thresholdvoltage of the NMOS transistor 602. The NMOS transistor 606 includesdrain-source terminals that are coupled between the drain and gateterminals of the NMOS transistor 602, and includes a gate coupled to thedrain of the NMOS transistor 602. The NMOS transistor 606 operates as apowerup assist diode and provides forward VT-canceling to charge thestage using the voltage boost from the previous stage. The capacitor 612is coupled between the gate of the NMOS transistor 602 and theoscillator signal on the input terminal 524 (as shown in FIG. 5, theoscillator signal may be either the first phase drive clock signal 112or the second phase drive clock signal 114.

The output voltage on the output terminal 617 is precharged during powerup by the NMOS transistors 608 and 610. The NMOS transistor 608 raisesthe breakdown voltage of the NMOS transistor 610, which self-biases theoutput voltage of the initial voltage boost stage circuit 502 using themedium pump signal 30. The NMOS transistor 608 includes a drain and agate coupled together and to the power supply Vdd. The NMOS transistor610 includes drain-source terminals coupled between the drain of theNMOS transistor 608 and the output terminal 617, and includes a gatebiased by the medium pump (VMPUMP) signal 30. By using the medium pumpsignal 30, the pump output is fed back to the NMOS transistor 610. Thevoltage level of the medium pump signal 30 may be selected to preventbreakdown of the NMOS transistor 610.

FIG. 7 is a schematic diagram illustrating the intermediate voltageboost stage circuit 504 of the pump 106 of FIG. 5. The intermediatevoltage boost stage circuit 504 is similar to the initial voltage booststage circuit 502. The intermediate voltage boost stage circuit 504comprises NMOS transistors 702, 704, 706, 708, 710 and capacitors 712,714. The NMOS transistors 702, 704, 706, 708, 710 are coupled togetherin a manner similar to the respective NMOS transistors 602, 604, 606,608, 610, but may have different electrical or physical characteristicsthan said respective NMOS transistors. Higher voltages are applied tothe intermediate voltage boost stage circuit 504 than to the initialvoltage boost stage circuit 502 so the NMOS transistors 702, 704, 706,708, 710 operate at a higher voltage than the corresponding NMOStransistors in the initial voltage boost stage circuit 502. Thecapacitors 712, 714 are arranged in a manner similar to the respectivecapacitors 612, 614.

FIG. 8 is a schematic diagram illustrating a final voltage boost stagecircuit 506 of the pump 106 of FIG. 5. The final voltage boost stagecircuit 506 is similar to the initial voltage boost stage circuit 502 ofFIG. 6. The final voltage boost stage circuit 506 comprises NMOStransistors 802, 804, 806, 808, 810 and capacitors 812, 814. The NMOStransistors 802, 804, 806, 808, 810 are coupled together in a mannersimilar to the respective NMOS transistors 602, 604, 606, 608, 610. TheNMOS transistors 802, 804, 806, 808, 810 may have different electricalor physical characteristics than the respective NMOS transistors 602,604, 606, 608, 610. Higher voltage levels are applied to the finalvoltage boost stage circuit 506 than to the stage circuits 502 and 504,so the NMOS transistors 802, 804, 806, 808, 810 operate at a highervoltage than the corresponding NMOS transistors in the initial voltageboost stage circuit 502 and the intermediate voltage boost stagecircuits 504. The capacitors 812, 814 are arranged in a manner similarto the capacitors 612, 614. The capacitors 812, 814 each may be formedof more than one capacitor to reduce the breakdown voltage.

FIG. 9 is a schematic diagram illustrating a pump regulator 14 of thehigh voltage generation and regulation system 10 of FIG. 1. The pumpregulator 14 comprises high medium supply (VHMSUP) voltage regulators902-1 and 902-2 and medium voltage (VM) pump generators 904-1 and 904-2.

The pump regulator 14 is a high voltage series regulator with slew rateenhancement and trimmable diode regulation. As an overview, the pumpregulator 14 regulates multiple levels of voltage using a high voltageoperational amplifier 1008 (see FIG. 10) with a trimmable dioderegulation feedback loop, and a slew enhancement circuit that provideshigh speed power up without consuming additional power from the chargepump 12. A band gap reference signal is fed into the circuit, andcompared to the feedback from a trimmable diode chain (see FIG. 12). Thediode chain provides feedback in the regulator and is trimmed by amultiplexer 1204 (see FIG. 12) which shunts out a number of diodes toachieve a different feedback ratio. The output of the operationalamplifier 1008 controls the current through the two series devices. Theslew rate (rise time to power up) of the regulated level is slow becausepower through the operational amplifier 1008 is supplied from thelimited power available from the charge pump 12. Thus, a slew rateenhancement circuit increases the slew rate by boosting the operationalamplifier output to just below the regulated level, where the regulatorcan then assumes control of the regulation level.

The high medium supply (VHMSUP) voltage regulator 902-1 generates thehigh voltage supply (VHSUP) signal 40 at an output terminal 906 inresponse to the high voltage pump (VHPUMP) signal 20 applied to a highvoltage input terminal 908 and the medium voltage pump (VMPUMP) signal30 applied to a medium voltage input terminal 910. The third reference(IREFN2) signal 34-2 adjusts biases in the high medium supply (VHMSUP)voltage regulator 902-1. The reference voltage (VREF) signal 32 providesa reference for regulating the output voltage. The first voltageselection (FVHMSUP0) signal 50 and the second voltage selection(FVHMSUP1) signal 52 are applied to multiplexer control terminals 912and 913, respectively, to control internal feedback of the high voltagesupply signal 40 for comparison to the reference voltage (VREF) signal32. The power down (PD) signal 38 disables the high medium supply(VHMSUP) voltage regulators 902-1 and 902-2 and the medium voltage pumpgenerators 904-1 and 904-2.

The medium high voltage supply (VHMSUP) regulator 902-2 generates themedium high voltage supply (VHMSUP) signal 42 at an output terminal 906in response to the high voltage supply (VHSUP) signal 40 being appliedto a high voltage input terminal 908 and the medium voltage pump(VMPUMP) signal 30 being applied to a medium voltage input terminal 910.(For simplicity and clarity, the terminals 908, 910, 912, and 913 arenot labeled in FIG. 9 for the regulator 902-2.) The third reference(IREFN3) signal 34-3 adjusts biases in the high medium supply (VHMSUP)voltage regulator 902-2. The reference voltage (VREF) signal 32 providesa reference for regulating the medium high voltage supply (VHMSUP)signal 42. The third voltage selection (FVHMSUP2) signal 54 and thefourth voltage selection (FVHMSUP3) signal 56 are applied to themultiplexer control terminals 912 and 913, respectively, to control theinternal feedback of the medium high voltage supply (VHMSUP) signal forcomparison to the reference voltage (VREF) signal 32.

The medium voltage pump generator 904-1 generates the medium voltagepump (VMPUMP) signal 30 in response to the high voltage pump (VHPUMP)signal 20. The third reference (IREFN1) signal 34-1 biases the mediumvoltage pump generator 904-1 to adjust the medium voltage pump (VMPUMP)signal 30. The medium voltage pump generator 904-2 generates the mediumvoltage supply (VMSUP) signal 44 in response to the high voltage supply(VHSUP) signal 40. The third reference (IREFN4) signal 34-4 biases themedium voltage pump generator 904-2 to adjust the medium voltage supply(VMSUP) signal 44.

FIG. 10 is a schematic diagram illustrating the high medium supply(VHMSUP) voltage regulator 902 of the pump regulator of FIG. 9. The highmedium supply (VHMSUP) voltage regulator 902 comprises a high medium(VHM) voltage divider 1002, an output boost circuit 1004, a high voltagedivider 1006, an operational amplifier 1008, a power down circuit 1010,a plurality of resistors 1012, 1014, a resistor-capacitor filter 1016, aplurality of NMOS transistors 1018 through 1031, and a capacitor 1032.

The voltage regulators 902-1 and 902-2 provides a high voltage supplysignal 40 and a medium high voltage supply signal 42, respectively, asdescribed above in conjunction with FIG. 9, at the output terminal 906.In one embodiment, both voltage regulators 902-1 and 902-2 have similarcircuits. For the sake of simplicity and clarity, the voltage regulator902 of FIG. 10 is described with respect to the voltage regulator 902-1and its associated input and output signals.

The drain-source terminals of the NMOS transistors 1018 and 1019 arecoupled in series between the input terminal 908, which for the voltageregulator 902-1 receives the high voltage pump (VHPUMP) signal 240, andthe output terminal 906 to regulate the output voltage. The gates of theNMOS transistors 1018 and 1019 are coupled together. Although two NMOStransistors 1018 and 1019 are shown, more or fewer transistors may beincluded to adjust the regulation or provide voltage breakdownprotection.

The NMOS transistors 1020 and 1021 are diode connected and coupled inseries between the output terminal 906 and the common node formed of thegates of the NMOS transistors 1018 and 1019 to prevent overshoot on theoutput terminal 906. The capacitor 1032 is coupled between the source ofthe NMOS transistor 1019 and the common node formed of the gates of theNMOS transistors 1018 and 1019 to filter noise.

The operational amplifier 1008 provides feedback to control the currentof the NMOS transistors 1018 and 1019. The output of the operationalamplifier 1008 is coupled through the resistor 1014 to the common nodeformed of the gates of the NMOS transistors 1018 and 1019. The output ofthe output boost circuit 1004 is coupled through the series connectedresistors 1012 and 1014 to the gates of the NMOS transistors 1018, 1019for slew rate enhancement. The output boost circuit 1004 boosts theoutput of the operational amplifier 1008 at power up to slew the outputto a controlled level after which the operational amplifier 1008 assumescontrol of the voltage regulation. The output boost circuit 1004provides the slew rate control output in response to a divided voltagesignal 1035 from the high voltage divider 1002, which divides the highvoltage pump signal as applied to the input terminal 908. The power downsignal 38 powers down the high voltage divider 1002.

FIG. 11 is a schematic diagram illustrating the output boost (OTA_boost)circuit 1004 of the high medium supply (VHMSUP) voltage regulator 902 ofFIG. 10.

The output boost circuit 1004 is a source-follower connected devicecontrolled by the high voltage divider 1002. The output boost circuit1004 comprises an NMOS transistor 1102, capacitors 1104-1, 1104-2,capacitors 1106-1, 1106-2, and an output voltage terminal 1108. Thecapacitors 1104-1 and 1104-2 are series connected between the gate ofthe NMOS transistor 1102 and ground. The capacitors 1106-1 and 1106-2are series connected between the source of the NMOS transistor 1102 andground. The capacitors 1106-1 and 1106-2 may function as compensationcapacitors for the operational amplifier 1108. Although two capacitors1104 and two capacitors 1106 are shown, fewer or more capacitors may beused depending on device characteristics for avoiding voltage breakdown.For the voltage regulator 902-1, the high voltage (VHPUMP) pump signal20 is applied to the high voltage input terminal 908 and thus applied tothe drain of the NMOS transistor 1102. For the voltage regulator 902-2,the high voltage supply signal 40 is applied to the high voltage inputterminal 908. The divided voltage signal 1035 is applied to the gate ofthe NMOS 1102. The output voltage terminal 1108 provides an output thatfollows the voltage applied to the gate of the NMOS transistor 1102.

Referring again to FIG. 10. In response to the divided voltage signal1035, the output boost circuit 1004 charges at power up the output ofthe operational amplifier 1008. The voltage level of the divided voltagesignal 1035 from the high voltage divided 1002 is adjusted so that itslews up to a little below, e.g., a few hundred millivolts, theregulated voltage level, at such level the operational amplifier 1008takes over the feedback control.

The drain-source terminals of the NMOS transistors 1030 and 1031 arecoupled in series between the output of the operational amplifier 1008and the common node formed of the input terminal 908 and an inputterminal of the filter 1016. In one embodiment the filter 1016 is madeof an R-C filter. In another embodiment the filter 1016 is made of D-Cfilter, i.e., a diode connected transistor functions as a resistor R.The NMOS transistors 1030 and 1031 are each diode connected to preventovershoot on the output of the operational amplifier 1008. The output ofthe resistor-capacitor filter 1016 is coupled to a high voltage supplyterminal of the operational amplifier 1008. The resistor-capacitorfilter 1016 filters the noise on the high voltage power applied to theoperational amplifier 1008 to improve the power supply rejection ratio.

The feedback voltage divider 1006 provides a feedback divided voltagesignal 1039 to the operational amplifier 1008 in response to the outputsignal on the output terminal 906 and first and second voltage selectionsignals 1042 and 1044, respectively. For the voltage regulator 902-1,the first and second voltage selection signals 1042 and 1044 are thefirst and second voltage selection signals 50 and 52, respectively. Forthe voltage regulator 902-2, the first and second voltage selectionsignals 1042 and 1044 are the third and fourth voltage selection signals54 and 56, respectively. The feedback voltage divider 1006 also providesa divided voltage signal 1038 that can be used as another regulated highvoltage. A power down signal 1040 from the power down circuit 1010 turnsoff the feedback voltage divider 1006. The power down circuit 1010provides the power down signal 1040 in response to the power down signal38 and the enable signal 48.

FIG. 12 is a schematic diagram illustrating the feedback voltage divider1006 of the voltage regulator 902 of FIG. 10. The feedback voltagedivider 1006 comprises a plurality of PMOS transistors 1202-1 through1202-18, a voltage divider multiplexer 1204, an inverter 1206 and anNMOS transistor 1208.

The drain-source terminals of the PMOS transistors are series coupledbetween the output terminal 906, which receives either the high voltagesupply signal 40 or the medium high voltage supply signal 42, and thedrain of the NMOS transistor 1208. Because the drain of the NMOStransistor 1208 is connected to the drain of the PMOS transistor1202-18, its drain to source voltage variation has little or noinfluence to the voltage on node 1039, which depends mainly on gate tosource voltage of the transistor 1202-18. Hence the transistor 1208contributes little or no error in the regulation. The source of the NMOStransistor 1208 is coupled to ground. The output of the inverter 1206 iscoupled to the gate of the NMOS transistor 1208 for controlling the NMOStransistor 1208 in response to the power down signal 1040. The dividedvoltage signal terminal 1038 is coupled to the drain of the PMOStransistor 1202-3. In another embodiment, the divided voltage signalterminal 1038 may be coupled to another PMOS transistor 1202 in order toprovide a different divided voltage. The feedback divided voltage signal1039 is provided by the drain of the PMOS transistor 1202-17. Trimconnections between selected ones of the series connected PMOStransistors 1202 may be included for adjusting the voltage on thedivided voltage signal terminal 1038 and the feedback divided voltagesignal 1039. The inverter 1206 applies an inversion of the power downsignal 1040 to the gate of the NMOS transistor 1208 to turn off the NMOStransistor 1208 and the feedback voltage divider 1006 during power down.The voltage divider multiplexer 1204 has four multiplexed selectedoutputs 1210-1 through 1210-4 connected to the drains of the PMOStransistors 1202-14 through 1202-17, respectively. The voltage dividermultiplexer 1204 controls the PMOS transistors 1202-14 through 1202-17in response to the first and second voltage selections signals appliedto the multiplexer control terminals 912 and 913. In another embodiment,another PMOS transistor 1202 provides the feedback divided voltagesignal 1039 and the multiplexer selected outputs 1210 may be connectedto other PMOS transistors 1202.

FIG. 13 is a schematic diagram illustrating a voltage dividermultiplexer 1204 of the feedback voltage divider 1006 of FIG. 12. Thevoltage divider multiplexer 1204 comprises a plurality of NMOStransistors 1302, 1304, 1306, a NOR gate 1308, an exclusive NOR gate1310, a NAND gate 1312, and a plurality of inverters 1314, 1316. Thedrain-source terminals of the NMOS transistors 1302, 1304, 1306 arecoupled in series to form the first voltage selection signal (VDIV_A)1210-1 at the drain terminal of the NMOS transistor 1302, a secondvoltage selection signal (VDIV_B) signal 1210-2 at the drain of the NMOStransistor 1304, a third voltage selection signal (VDIV_C) 1210-3 at thedrain of the NMOS transistor 1306, and a fourth voltage selection signal(VDIV_D) 1210-4 at the source of the NMOS transistor 1308. The outputsof the NOR gate 1308, the exclusive NOR gate 1310 and the NAND gate 1312are coupled to the gate of the respective NMOS transistor 1302, 1304 and1306, and coupled together with the inverters 1314, 1316 to form theselection logic for turning on and off the NMOS transistors 1302, 1304,and 1306 in response to the voltage selection signals applied to themultiplexer control terminals 912 and 913.

Refer again to FIG. 10. The feedback divided voltage 1039 is applied tothe operational amplifier 1008 and compared to the reference voltage 32.The operational amplifier 1008 receives the high voltage from the highvoltage input terminal 908, which is filtered by the filter 1016, as anoperational voltage. The operational amplifier 1008 also is biased bythe third reference (IREFN) signal 34.

The output voltage on the output terminal 906 is precharged during powerup by the NMOS transistors 1022 and 1023. The output terminal 906 isself-biased by the NMOS transistor 1023, which is biased by the mediumvoltage pump signal 30 applied to a gate thereof. The NMOS transistors1022 and 1023 include drain-source terminals coupled between the supplyvoltage and the output terminal 906. The NMOS transistor 1022 is diodeconnected. The NMOS transistor 1022 raises the breakdown voltage of theNMOS transistor 1023. By using the medium voltage pump signal 30, theregulator output is fed back to the NMOS transistor 1023. The voltagelevel of the medium pump signal 30 may be selected to prevent voltagebreakdown when the regulator is fully powered up.

The NMOS transistor 1024 and the NMOS transistor pair 1025 and 1026 arecoupled together as a cascode between the output terminal 906 andground. The gates of the NMOS transistors 1025 and 1026 are coupledtogether and biased by the third reference (IREFN) signal 34. The NMOStransistor 1024 is biased by the medium voltage signal 30 applied to themedium voltage input terminal 910. The NMOS transistors 1027, 1028 and1029 are coupled together in a similar manner as the respective NMOStransistors 1024, 1025 and 1026 and selectively coupled in parallel tothe NMOS transistors 1024, 1025 and 1026.

Refer again to FIG. 1. The loop regulator 16 generates the enable (ENB)signal 28 to control the charge pump 12 based on the pre-regulatedoutput of the charge pump 12.

FIG. 14 is a schematic diagram illustrating the loop regulator 16 of thehigh voltage generation and regulation system 10. The loop regulator 16comprises a loop voltage divider 1402, a comparator 1404, a NAND circuit1406, and a pool capacitor 1408. The loop regulator 16 provides a nestedloop within a larger regulation loop of the pump regulator 14 and thecharge pump 12 to control the charge pump 12 by enabling and disablingthe oscillator 102 based on the pre-regulated output (high voltage pumpsignal 20) of the charge pump 12. This output can then be fed into thelarger regulation loop for supplying multiple voltage levels to theexternal device. The nested loop regulation controls breakdown, and alsofunctions by using the comparator 1404 with the inputs from a band gapreference voltage (not shown) and the loop voltage divider 1402 forfeedback. Based on the comparison, the output of the charge pump 12 iscontrolled by enabling or disabling the oscillator 102.

The loop voltage divider 1402 divides the high voltage pump (VHPUMP)signal 20 from the charge pump 12 to generate a divided voltage signal1410, which is applied to the comparator 1404. The loop voltage divider1402 may be, for example, a voltage divider 1518 (see FIG. 16). The poolcapacitor 1408 couples the high voltage pump (VHPUMP) signal 20 toground to filter ripple on the high voltage pump signal 20. The loopvoltage divider 1402 and the comparator 1404 are disabled by the powerdown (PD) signal 38. The third reference (IREFN3) signal 34 controls thebiasing of the comparator 1404. The comparator 1404 generates a signalto disable the output of the charge pump 12 in the event that thedivided voltage signal 1410 is greater than the reference voltage (VREF)32 applied to the comparator 1404. The NAND circuit 1406 generates theenable (ENB) signal 28 in response to both the output of the comparator1404 and the enable (EN) signal 36 being high.

FIG. 15 is a schematic diagram illustrating the medium voltage pumpgenerator 108 of the charge pump 12 of FIG. 1 a. The VM pump generator108 comprises a pump medium voltage divider (vdivider_vmpump) 1502, anoutput boost (OTA_boost) circuit 1004, a NMOS transistor 1504, an NMOStransistor pair 1506, NMOS transistors 1508, 1510, an NMOS transistorpair 1512, an NMOS transistor 1514, and an NMOS transistor pair 1516.

The output boost circuit 1004 (described above in conjunction with FIG.10) is a source-follower device. The output boost circuit 1004 providesthe medium voltage pump signal at an output terminal 1517, which iscoupled to the source terminal of the NMOS transistor 1504 and to thedrain terminals of the NMOS transistors 1510, 1514. Biasing of the NMOStransistor 1102 (see FIG. 11) in the output boost circuit 1004 iscontrolled by a divided voltage signal 1518 from the medium voltage pumpvoltage divider 1502.

FIG. 16 is a schematic diagram illustrating the medium voltage pumpvoltage divider 1502 of the medium voltage pump generator 108. The pumpmedium voltage divider 1502 comprises PMOS transistors 1602-1 through1602-18, an NMOS transistor 1604, and an inverter 1606. The PMOStransistors 1602-1 through 1602-18 each include a bulk that is coupledto its source. The PMOS transistors 1602-1 through 1602-17 each includea gate that is coupled to its drain. The PMOS transistor 1602-18includes a gate coupled to ground. The drain-source terminals of thePMOS transistors 1602-1 through 1602-18 are coupled in series betweenthe high voltage pump (VHPUMP) signal 20 and a drain of the NMOStransistor 1604. The source of the NMOS transistor 1604 is coupled toground. The inverter 1606 inverts the power down signal 38 and appliesthe inverted signal to the gate of the NMOS transistor 1604 to turn offthe NMOS transistor 1604 and the voltage divider 1502 during power down.Turning off the NMOS transistor 1604 at power down controls the voltageson the PMOS transistors 1602 to prevent high voltage breakdown. In oneembodiment, the divided voltage signal 1518 is provided from the drainof the PMOS transistor 1602-6. The number of PMOS transistors 1602 maybe changed to adjust the voltage of the divided voltage signal 1518. Inone embodiment, some of the PMOS transistors 1602 may be selected bytrimming trace connections on the device that short the sources of someof the PMOS transistors 1602 together. For illustrative purposes, thePMOS transistors 1602-14 through 1602-17 have their sources shortedtogether.

Refer again to FIG. 15. The drain of the NMOS transistor 1510 is coupledto the common node of the source of the NMOS transistor 1504 and themedium voltage pump signal 30. The NMOS transistor pair 1512 comprisestwo NMOS transistors including drain-source terminals coupled togetherin series between the source of the NMOS transistor 1510 and ground, andincluding gate terminals coupled together. Similarly, the NMOStransistor pair 1516 includes two NMOS transistors having drain-sourceterminals coupled in series between the source of the NMOS transistor1514 and ground and having gate terminals coupled together. The NMOStransistor 1508 includes drain-source terminals coupled between thecommon node formed of the gates of the NMOS transistor pairs 1512, 1516and the fourth reference (IREFN) signal 120 and ground, and includes agate coupled to receive the power down (PD) signal 38 to turn off theNMOS transistor pairs 1512 and 1514. The NMOS transistor pair 1506includes two NMOS transistors with drain-source terminals connected inseries and coupled between the fourth reference (IREFN) signal 120 andground, and with a gate coupled together and to the fourth reference(IREFN) signal 120.

In this disclosure, there is shown and described only the preferredembodiments of the invention, but, as aforementioned, it is to beunderstood that the invention is capable of use in various othercombinations and environments and is capable of changes or modificationswithin the scope of the inventive concept as expressed herein.

1. A high voltage generation and regulation system comprising: a chargepump generating a high voltage pump signal in response to an enablesignal and a medium voltage pump signal; a pump loop regulatorgenerating a plurality of high voltage signals having different voltagelevels and the medium voltage pump signal in response to the highvoltage pump signal; and a nested loop regulator generating the enablesignal in response to the high voltage pump signal being below athreshold voltage.
 2. The high voltage generation and regulation systemof claim 1 wherein the pump loop regulator comprises a comparator forcontrolling the voltage level of the plurality of high voltage signalsin response to a control signal and a trimmable voltage divider forgenerating the control signal in response to said voltage level.
 3. Thehigh voltage generation and regulation system of claim 2 wherein thepump loop regulator includes a slew rate enhancement circuit toprecharge the comparator output during power up.
 4. The high voltagegeneration and regulation system of claim 1 wherein the charge pumpgenerates an oscillator test signal.
 5. The high voltage generation andregulation system of claim 1 wherein the charge pump includes a testport for monitoring an oscillator signal or receiving a test signal. 6.A charge pump system comprising: a pump for generating a boosted voltagein response to at least two clock signals; and an oscillator coupled tothe pump for generating said at least two clock signals and including aring oscillator, a multiplexer, and an output stage, the ring oscillatorproviding one of the at least one clock signals to the multiplexer andthe output stage providing another one of the at least two clock signalsto the multiplexer, the multiplexer outputting the two clock signals inresponse to a first state of an enable signal and not outputting the twoclock signals in response to a second state of the enable signal, thering oscillator generating said one of the at least two clock signalsindependent of the enable signal.
 7. A high voltage generation andregulation system comprising: a charge pump comprising: a pump forgenerating a boosted voltage signal in response to at least two clocksignals and a feedback voltage signal; and an oscillator coupled to thepump for generating said at least two clock signals and including a ringoscillator, an output stage, and a multiplexer, the ring oscillatorproviding one of the at least one clock signals to the multiplexer andthe output stage providing another one of the at least two clock signalsto the multiplexer, the multiplexer outputting the two clock signals inresponse to a first state of an enable signal and not outputting the twoclock signals in response to a second state of the enable signal, thering oscillator generating said one of the at least two clock signalsindependent of the enable signal; and a loop regulator generating thefeed back voltage signal in response to the boosted voltage signal.
 8. Ahigh voltage generation and regulation system comprising: a charge pumpcomprising: a pump for generating a boosted voltage signal in responseto at least two clock signals and a feedback voltage signal; and aplurality of first inverters coupled in series with an output of onefirst inverter coupled to the input of another first inverter, one ofsaid first inverters providing a first clock signal; a plurality offirst capacitors, each of said plurality of first capacitors beingcoupled to the output of a respective one of said plurality of firstinverters; a second inverter having an input coupled to the output ofsaid one first inverter providing said first clock signal and having anoutput for providing a second clock signal; and a second capacitorcoupled to the output of the second inverter, the ratio of a capacitanceof the second capacitor to a capacitance of the first capacitors beingsuch to adjust the phase between the first and second clock signals to apre-selected value; and a loop regulator generating the feedback voltagesignal in response to the boosted voltage signal.
 9. A high voltagegeneration and regulation system comprising: a charge pump comprising: apump for generating a boosted voltage signal in response to at least twoclock signals and a feedback voltage signal, a plurality of firstinverters coupled in series with an output of one first inverter coupledto the input of another first inverter, each of said plurality ofinverters providing a first inverted signal having characteristicsdependent on an applied first bias current, one of said first invertersproviding a first clock signal, a plurality of first capacitors, each ofsaid plurality of first capacitors being coupled to the output of arespective one of said plurality of first inverters, a second inverterhaving an input coupled to the output of said one first inverterproviding said first clock signal and having an output for providing asecond clock signal having characteristics dependent on an appliedsecond bias current, the ratio of first bias current to the second biascurrent being such to adjust the phase between the first and secondclock signals to a pre-selected value, a second capacitor coupled to theoutput of the second inverter, the capacitance of each of the pluralityof first capacitors being equal to the capacitance of the secondcapacitor; and a loop regulator generating the feed back voltage signalin response to the boosted voltage signal.
 10. A charge pump comprising:a plurality of voltage boost stages coupled in series, each of thevoltage boost stages generating an output signal having a voltage levelhigher than an input voltage applied thereto, and each comprising afirst transistor including a first terminal coupled to receive saidinput voltage and including a second terminal for providing said outputsignal, and further comprising a powerup assist diode to charge theinput voltage applied to the voltage boost stage coupled to the outputsignal, wherein each voltage boost stage comprises a circuit to forwardcancel the threshold voltage of the first transistor.
 11. The chargepump of claim 10 wherein said circuit comprises a cancellationtransistor including a first terminal coupled to the first terminal ofthe first transistor, including a second terminal spaced apart from saidfirst terminal of the cancellation transistor with a channeltherebetween and coupled to a gate of the first transistor and includinga gate coupled to the first terminal of the second transistor.
 12. Thecharge pump of claim 11 wherein said circuit further comprises a thirdtransistor to backward cancel the threshold voltage of the firsttransistor.
 13. The charge pump of claim 12 wherein the third transistorincludes a first terminal coupled to the first terminal of the firsttransistor, and including a second terminal spaced apart from saidsecond terminal with a channel therebetween and coupled to a gate of thefirst transistor and including a gate for controlling current in saidchannel and coupled to the second terminal of the first transistor. 14.A charge pump comprising: a plurality of voltage boost stages coupled inseries, each of the voltage boost stages generating an output signalhaving a voltage level higher than an input voltage applied thereto, andeach comprising a first transistor including a first terminal coupled toreceive said input voltage and including a second terminal for providingsaid output signal, and further comprising a powerup assist diode tocharge the input voltage applied to the voltage boost stage coupled tothe output signal, wherein each boost stage comprises a circuit tobackward cancel the threshold voltage of the first transistor.
 15. Thecharge pump of claim 14 wherein the circuit comprises a secondtransistor including a first terminal coupled to the first terminal ofthe first transistor, including a second terminal spaced apart from thefirst terminal of the second transistor with a channel therebetween andcoupled to the gate of the first transistor and including a gate forcontrolling current in said channel and coupled to the second terminalof the first transistor.
 16. A charge pump comprising: a plurality ofvoltage boost stages coupled in series, each of the voltage boost stagesgenerating an output signal having a voltage level higher than an inputvoltage applied thereto, and each comprising a first transistorincluding a first terminal coupled to receive said input voltage andincluding a second terminal for providing said output signal, andfurther comprising a powerup assist diode to charge the input voltageapplied to the voltage boost stage coupled to the output signal, whereineach voltage boost stage comprises a cancellation transistor coupled tothe first terminal to substantially cancel a threshold voltage of thefirst transistor in response to the output signal.
 17. A charge pumpcomprising: a plurality of voltage boost stages coupled in series, eachof the voltage boost stages generating an output signal having a voltagelevel higher than an input voltage applied thereto, and each comprisinga first transistor including a first terminal coupled to receive saidinput voltage and including a second terminal for providing said outputsignal, and further comprising a powerup assist diode to charge theinput voltage applied to the voltage boost stage coupled to the outputsignal, wherein at least one of the plurality of voltage boost stagesincludes a high voltage self-biasing circuit to precharge the outputsignal before application of said input voltage.
 18. The charge pump ofclaim 17 wherein the high voltage self-biasing circuit comprises asecond transistor including a first terminal coupled to a supply voltageterminal, including a second terminal spaced apart from said firstterminal with a channel therebetween, and including a gate forcontrolling current in said channel and coupled to said first terminal,and comprises a third transistor including a first terminal coupled tothe second terminal of the second transistor, including a secondterminal spaced apart from said first terminal with a channeltherebetween and coupled to the output signal, and including a gate forcontrolling current in said channel and coupled to a medium voltageterminal.
 19. The charge pump of claim 18 wherein a medium voltageapplied to the medium voltage terminal has a voltage level between avoltage level of a supply voltage applied to the supply voltage terminaland a voltage level of the output signal of the last voltage booststage.
 20. A charge pump comprising: a plurality of voltage boost stagescoupled in series, each of the voltage boost stages generating an outputsignal having a voltage level higher than an input voltage appliedthereto, and each comprising a first transistor including a firstterminal coupled to receive said input voltage and including a secondterminal for providing said output signal, at least one of the pluralityof voltage boost stages includes a high voltage self-biasing circuit toprecharge the output signal for application of said input voltage,wherein the high voltage self-biasing circuit comprises a secondtransistor including a first terminal coupled to a supply voltageterminal, including a second terminal spaced apart from said terminalwith a channel therebetween and including a gate for controlling currentin said channel and coupled to said first terminal, and comprises athird transistor including a first terminal coupled to the secondterminal of the second transistor, including a second terminal spacedapart from said first terminal with a channel therebetween and coupledto the output signal, and including a gate for controlling current insaid channel and coupled to the median voltage terminal.
 21. The chargepump of claim 20 wherein a median voltage applied to the median voltageterminal has a voltage level between a voltage level of a supply voltageapplied to the supplied voltage terminal and a voltage level of theoutput signal of the last voltage boost stage.
 22. A high voltagegeneration and regulation system comprising: a charge pump generating aboosted voltage signal in response to at least two clock signals and afeedback voltage signal comprising: a plurality of voltage boost stagescoupled in series, each of the voltage boost stages generating an outputsignal having a voltage level higher than an input voltage appliedthereto, and each comprising a first transistor including a firstterminal coupled to receive said input voltage and including a secondterminal for providing said output signal, and further comprising apowerup assist diode to charge the input voltage applied to the voltageboost stage coupled to the output signal, and an oscillator coupled tothe plurality of voltage boost stages for generating said at least twoclock signals; and a loop regulator generating the feed back voltagesignal in response to the boosted voltage signal.
 23. The high voltagegeneration and regulation system of claim 22 wherein each voltage booststage comprises a cancellation transistor coupled to the first terminalto substantially cancel a threshold voltage of the first transistor inresponse to the output signal.
 24. The high voltage generation andregulation system of claim 22 wherein at least one of the plurality ofvoltage boost stages includes a high voltage self-biasing circuit toprecharge the output signal before application of said input voltage.25. The high voltage generation and regulation system of claim 24wherein the high voltage self-biasing circuit comprises a secondtransistor including a first terminal coupled to a supply voltageterminal, including a second terminal spaced apart from said terminalwith a channel therebetween, and including a gate for controllingcurrent in said channel and coupled to said first terminal, andcomprises a third transistor including a first terminal coupled to thesecond terminal of the second transistor, including a second terminalspaced apart from said first terminal with a channel therebetween andcoupled to the output signal, and including a gate for controllingcurrent in said channel and coupled to a medium voltage terminal. 26.The high voltage generation and regulation system of claim 25 wherein amedium voltage applied to the medium voltage terminal has a voltagelevel between a voltage level of a supply voltage applied to the supplyvoltage terminal and a voltage level of the output signal of the lastvoltage boost stage.
 27. A high voltage generation and regulation systemcomprising: a charge pump for generating a voltage signal in response toat least two clock signals and a feedback signal; a loop regulatorgenerating the feedback voltage signal in response to the boostedvoltage signal, the loop regulator comprising; a voltage regulatorproviding a regulated voltage signal in response to an input voltagesignal and a control signal; a comparator coupled to the voltageregulator to generate the control signal in response to the regulatedvoltage signal; and a slew rate enhancement circuit coupled to an outputof the comparator to boost the control signal in the event the regulatedvoltage signal has a voltage level less than a threshold voltage. 28.The high voltage generation and regulation system of claim 22 whereinthe slew rate enhancement circuit comprises a source follower.
 29. Thehigh voltage generation and regulation system of claim 28 wherein theslew rate enhancement circuit further comprises a voltage regulator togenerate a divided voltage signal in response to the input voltagesignal and wherein the source follower provides said boost of thecontrol signal in response to said divided voltage signal.
 30. The highvoltage generation and regulation system of claim 29 wherein the slewrate enhancement circuit compensates for the output of the comparator.31. The high voltage generation and regulation system of claim 27wherein the slew rate enhancement circuit provides compensation for theoutput of the comparator.
 32. The high voltage generation and regulationsystem of claim 27 wherein the threshold voltage is below a peak voltageof the regulated voltage signal.
 33. The high voltage generation andregulation system of claim 32 wherein the threshold voltage is nogreater than 100 millivolts below the peak voltage of the regulatedvoltage signal.
 34. The high voltage generation and regulation system ofclaim 27 further comprising a self-biasing circuit to precharge theoutput terminal during power up.
 35. A high voltage generation andregulation system comprising: a charge pump for generating a voltagesignal in response to at least two clock signals and a feedback signal;a loop regulator generating the feedback voltage signal in response tothe boosted voltage signal, the loop regulator comprising; a highvoltage input terminal; an output terminal; a first transistor includinga first terminal coupled to the high voltage input terminal, including asecond terminal spaced apart from said first terminal with a channeltherebetween, and including a gate for controlling current in saidchannel; a second transistor including a first terminal coupled to thesecond terminal of the first transistor, including a second terminalcoupled to the output terminal to provide an output voltage thereto andspaced apart from said first terminal with a channel therebetween, andincluding a gate for controlling current in said channel and coupled tothe gate of the first transistor; a feedback voltage generator coupledto the output terminal to generate a feedback voltage in response to theoutput voltage; and a comparator having a first input coupled to thefeedback voltage generator, a second input coupled to a referencevoltage terminal and an output coupled to the gates of the first andsecond transistors.
 36. The high voltage generation and regulationsystem of claim 35 wherein the feedback voltage generator is a voltagedivider.
 37. The high voltage generation and regulation system of claim36 wherein the voltage divider comprises: a plurality of thirdtransistors coupled in series between the output terminal and a groundterminal, each of the plurality of third transistors being diodeconnected, one of the plurality of third transistors providing thefeedback voltage.
 38. The high voltage generation and regulation systemof claim 37 wherein the voltage divider further comprises a fourthtransistor coupled between another one of the plurality of thirdtransistors and ground to float a voltage of a terminal of said anotherone of the plurality of third transistor in response to a power downsignal.
 39. The high voltage generation and regulation system of claim38 wherein at least one of the plurality of third transistors isselectively shunted.
 40. The high voltage generation and regulationsystem of claim 37 wherein at least one of the plurality of thirdtransistors is selectively shunted.
 41. The high voltage generation andregulation system of claim 36 wherein the voltage divider comprises aplurality of p-channel diodes coupled in series between the outputterminal and a second terminal at a voltage less than the voltage of theoutput terminal.
 42. The high voltage generation and regulation systemof claim 36 further comprising a trimming circuit to selectively selectones of said plurality of third transistors.
 43. The high voltagegeneration and regulation system of claim 42 wherein the trimmingcircuit comprises a plurality of fourth transistors coupled in series,each of the plurality of fourth transistors including first and secondterminal coupled to respective first and second terminals of acorresponding one of the plurality of third transistors and including agate coupled to a respective select signal to change the feedbackvoltage.
 44. The high voltage generation and regulation system of claim35 further comprising a filter coupled between the high voltage inputterminal and the comparator.
 45. The high voltage generation andregulation system of claim 44 wherein the filter is a resistor-capacitorfilter.
 46. The high voltage generation and regulation system of claim35 further comprising: a third transistor including a first terminalcoupled to a supply voltage, including a second terminal spaced apartfrom said first terminal with a channel therebetween, and including agate coupled to said first terminal for controlling current in saidchannel, and a fourth transistor including a first terminal coupled tothe second terminal of the third transistor, including a second terminalcoupled to the output terminal and spaced apart from said first terminalwith a channel therebetween, and including a gate for controllingcurrent in said channel in response to a control voltage appliedthereto, the control voltage being a function of the voltage on theoutput terminal.
 47. The high voltage generation and regulation systemof claim 46 wherein the voltage of the control voltage biases the fourthtransistor to prevent breakdown of the fourth transistor.
 48. A nestedloop regulator comprising: a voltage divider generating a dividedvoltage signal in response to a high voltage output signal from a chargepump; and a comparator having a first input coupled to the voltagedivider, having a second input for receiving a reference voltage, andhaving an output for generating an enable signal to enable a charge pumpin response to the divided voltage signal being below the referencevoltage.
 49. The nested loop regulator of claim 48 further compressing acapacitor coupled to an input of the voltage divider to filter said highvoltage output signal.
 50. The nested loop regulator of claim 48,wherein the voltage divider comprises: a plurality of transistors, eachtransistor including a first terminal, a second terminal spaced apartfrom said first terminal with a channel therebetween, and a gate forcontrolling current in said channel, the first terminal of a first oneof said plurality of transistors being coupled to receive the chargepump high voltage output signal, the gate of a second one of saidplurality of transistors being coupled to ground and the second terminalof said second one of said plurality of transistors being coupled toground, the first terminal of each of the other ones of said transistorsbeing coupled to the second terminal of another one of said plurality oftransistors to form a cascode arrangement.
 51. The nested loop regulatorof claim 50 wherein the voltage divider further comprises anothertransistor including a first terminal and second terminals, a channelbetween said first and second terminals, and a gate for controllingcurrent in said channel and coupled to a power enable signal, the firstand second terminals of said another transistor being coupled betweenthe second terminal of said second one of the plurality of transistorsand ground.
 52. A voltage regulation system comprising: a charge pumphaving a first input for receiving an enable signal, having a secondinput for receiving a regulated voltage signal, and having an output forproviding a pump voltage signal in response to the regulated voltagesignal and the enable signal; a pump regulator coupled to the chargepump for providing the regulated voltage signal in response to the pumpvoltage signal; and a nested loop regulator having an input coupled tothe output of the charge pump and having an output for generating theenable signal in response to the pump voltage signal being below athreshold voltage.
 53. The voltage regulation system of claim 52 whereinthe nested loop regulator comprises: a voltage divider generating adivided voltage signal in response to the pump voltage signal; and acomparator having a first input coupled to the voltage divider, having asecond input for receiving a reference voltage having a thresholdvoltage level, and having an output for providing the enable signal inresponse to the divided voltage signal being below the referencevoltage.
 54. The voltage regulation system of claim 52 wherein thevoltage divider comprises: a plurality of transistors, each transistorincluding a first terminal, a second terminal spaced apart from saidfirst terminal with a channel therebetween, and a gate for controllingcurrent in said channel, the first terminal of a first one of saidplurality of transistors being coupled to receive the charge pump highvoltage output signal, the gate of a second one of said plurality oftransistors being coupled to ground and the second terminal of saidsecond one of said plurality of transistors being coupled to ground, thefirst terminal of each of the other ones of said transistors beingcoupled to the second terminal of another one of said plurality oftransistors to form a cascode arrangement.
 55. The voltage regulationsystem of claim 54 wherein the voltage divider further comprises anothertransistor including a first terminal and second terminals, a channelbetween said first and second terminals, and a gate for controllingcurrent in said channel and coupled to a power enable signal, the firstand second terminals of said another transistor being coupled betweenthe second terminal of said second one of the plurality of transistorsand ground.